View MGF4934AM07_1110070.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

July/2007
MITSUBISHI SEMICONDUTOR
MGF4934AM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
DESCRIPTION
The MGF4934AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.
Outline Drawing
FEATURES
Low noise figure @ f=12GHz NFmin. = 0.55dB (Typ.) High associated gain @ f=12GHz Gs = 12.5dB (Typ.)
Fig.1
MITSUBISHI Proprietary
APPLICATION
S to Ku band low noise amplifiers
Not to be reproduced or disclosed without permission by Mitsubishi Electric
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
ORDERING INFORMATION
Tape & reel 3000pcs/reel
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
(Ta=25C )
ABSOLUTE MAXIMUM RATINGS
Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature
Ratings -4 -4 IDSS 50 125 -55 to +125
(Ta=25C )
Unit V V mA mW C C
ELECTRICAL CHARACTERISTICS
Symbol V(BR)GDO IGSS IDSS VGS(off) Gs NFmin. Parameter
Gate to drain breakdown voltage Gate to source leakage current Saturated drain current Gate to source cut-off voltage Associated gain Minimum noise figure
Test conditions MIN. IG=-10A VGS=-2V,VDS=0V VGS=0V,VDS=2V VDS=2V,ID=500A VDS=2V, ID=10mA,f=12GHz -3.5 -12 -0.1 11.5 --
Limits TYP. ----12.5 0.55 MAX -50 60 -1.5 -0.80
Unit V A mA V dB dB
MITSUBISHI
(1/6)
July/2007
MITSUBISHI SEMICONDUTOR
MGF4934AM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
Fig.1
0.30
+0.1 -0.05
2.10 0.1 1.30 0.05 (0.65) (0.65) 0.30 -0.05
+0.1
0.1
0.1
2.05
1.25
Top
Bc

+0.1 0.30 -0.05 +0.1 -0.05
0.11 -0
+0.05
0.40
(0.60) (0.65)
0.49 0.05
1.25 0.05
Side
Unit: mm
(0.85)
Bottom
Gate Source Drain
(GD-30)
MITSUBISHI
(2/6)
July/2007
MITSUBISHI SEMICONDUTOR
MGF4934AM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
TYPICAL CHARACTERISTICS
(Ta=25C)
ID vs. VDS
(VGS=~0.1V/STEP) 50 50
ID vs. VGS
(VDS=2V)
Drain Current, I D(mA)
30
Drain Current, I D(mA)
0 1 2 3 4
40
40
30
20
20
10
10
0
0 -1.0
-0.5
0.0
Drain to Source voltage, VDS(V)
Gate to Souce voltage, VGS(V)
NF & Gs vs. ID
2.20 2.00 Ta=25 VDS=2V f=12GHz 15 14 13
Noise Figure, NF (dB)
1.80 1.60 1.40 1.20 1.00 0.80 0.60 0.40 0.20 0.00 0
Gs
12 11 10 9
NF
8 7 6 5 4
5
10
15
20
Drain Current, ID (mA)
MITSUBISHI
(3/6)
Associated Gain, Gs (dB)
July/2007
MITSUBISHI SEMICONDUTOR
MGF4934AM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
S PARAMETERS
(VDS=2V,ID=10mA,Ta=room temperature)
Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
S11 (mag) (ang) 0.986 -14.0 0.961 -27.8 0.918 -41.9 0.863 -59.4 0.808 -72.1 0.748 -85.2 0.683 -98.1 0.613 -111.9 0.543 -126.8 0.474 -142.9 0.421 -160.9 0.395 177.9 0.395 154.9 0.433 132.9 0.491 114.0 0.559 97.5 0.630 83.0 0.692 70.3 0.739 60.2 0.787 52.4 0.828 45.4 0.866 39.4 0.894 33.7 0.921 26.1 0.937 16.9 0.936 5.9
S21 (mag) (ang) 4.534 163.6 4.478 148.2 4.394 132.8 4.523 116.2 4.309 102.2 4.148 88.6 4.015 75.1 3.860 61.9 3.744 49.0 3.644 35.8 3.552 22.8 3.488 9.6 3.396 -4.0 3.295 -17.6 3.183 -31.5 3.056 -45.9 2.886 -60.6 2.662 -74.9 2.401 -87.7 2.198 -98.5 2.060 -109.9 1.940 -120.6 1.810 -131.4 1.710 -142.1 1.632 -152.9 1.541 -165.3
S12 (mag) (ang) 0.014 79.1 0.027 70.5 0.038 61.9 0.052 50.3 0.060 43.3 0.067 36.9 0.073 30.5 0.078 25.3 0.082 20.9 0.087 17.1 0.092 14.0 0.100 11.1 0.111 7.6 0.122 2.2 0.133 -4.2 0.144 -11.1 0.154 -18.6 0.161 -26.6 0.169 -34.2 0.174 -42.1 0.179 -50.4 0.180 -58.5 0.183 -65.4 0.184 -71.5 0.187 -78.0 0.186 -86.0
S22 (mag) 0.676 0.663 0.638 0.580 0.559 0.530 0.496 0.454 0.411 0.364 0.321 0.278 0.239 0.214 0.219 0.256 0.315 0.379 0.440 0.484 0.527 0.575 0.632 0.695 0.770 0.846
(ang) -11.0 -22.3 -32.7 -45.1 -53.8 -62.2 -70.0 -76.5 -83.1 -91.0 -100.6 -114.7 -133.9 -159.5 170.8 144.4 122.4 104.1 88.4 73.6 60.5 47.9 35.7 25.4 16.7 8.8
Noise Parameter
f (GHz)
(VDS=2V,ID=10mA, Ta=room temperature))
opt
Magn. Angle(deg.)
Rn
()
NFmin
(dB)
12
0.326
162.2
3.0
0.56
Reference point
Gate
Reference point
Drain 0.96
Board: r=2.6 Thickness: 0.4mm (4-0.4: through-hole)
2.5mm
45
MITSUBISHI
(4/6)
July/2007
MITSUBISHI SEMICONDUTOR
MGF4934AM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
S PARAMETERS
(VDS=0V,VGS=0V,Ta=room temperature)
Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 S11 (mag) (ang) 0.995 -12.5 0.990 -24.6 0.991 -37.5 0.983 -53.3 0.976 -67.1 0.961 -81.0 0.951 -95.7 0.940 -112.3 0.913 -130.9 0.902 -151.8 0.887 -175.9 0.883 159.0 0.884 134.4 0.889 112.1 0.896 93.6 0.907 78.5 0.911 66.4 0.919 55.9 0.924 47.1 0.919 38.7 0.921 31.2 0.924 24.3 0.928 18.1 0.950 11.6 0.970 5.4 0.978 -1.5 S21 (mag) (ang) 0.008 96.4 0.018 100.5 0.032 99.5 0.051 92.5 0.074 85.0 0.099 76.0 0.130 65.5 0.163 53.6 0.196 41.0 0.229 27.1 0.256 12.0 0.274 -2.5 0.276 -16.9 0.268 -30.5 0.257 -42.0 0.241 -51.5 0.228 -59.6 0.221 -67.5 0.217 -76.6 0.204 -87.1 0.192 -95.0 0.179 -103.1 0.168 -110.3 0.159 -116.7 0.149 -122.1 0.141 -128.2 S12 (mag) (ang) 0.008 97.7 0.018 100.7 0.032 98.9 0.051 94.0 0.075 85.5 0.100 76.5 0.131 65.3 0.163 54.3 0.198 41.3 0.230 27.3 0.257 12.7 0.273 -2.7 0.278 -17.2 0.270 -30.2 0.256 -42.0 0.241 -51.1 0.227 -59.8 0.221 -67.4 0.218 -76.5 0.204 -86.9 0.193 -95.3 0.179 -103.2 0.168 -110.6 0.157 -116.3 0.150 -122.1 0.141 -128.3 S22 (mag) 0.673 0.673 0.671 0.694 0.697 0.704 0.719 0.730 0.745 0.759 0.774 0.783 0.794 0.800 0.807 0.811 0.807 0.815 0.817 0.814 0.810 0.811 0.817 0.816 0.830 0.844 (ang) 165.1 152.1 138.7 127.4 112.5 97.6 83.4 70.8 59.2 49.3 41.2 34.8 29.2 24.0 18.7 13.2 7.1 0.6 -6.9 -14.8 -23.2 -31.2 -39.2 -46.5 -53.8 -61.8
(VDS=0V,VGS=-2.5V,Ta=room temperature)
Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 S11 (mag) (ang) 0.993 -9.6 0.996 -18.9 0.992 -28.3 0.987 -39.7 0.981 -49.5 0.975 -59.1 0.968 -68.8 0.963 -79.2 0.949 -89.9 0.943 -102.2 0.932 -117.2 0.929 -134.6 0.932 -155.8 0.938 -179.2 0.940 156.2 0.948 133.1 0.951 112.7 0.952 95.4 0.956 80.9 0.951 68.1 0.953 57.2 0.946 47.5 0.950 38.8 0.965 30.8 0.982 23.3 0.993 15.4 S21 (mag) (ang) 0.022 78.7 0.044 68.6 0.065 59.8 0.092 48.4 0.112 38.8 0.131 28.8 0.150 19.2 0.169 7.7 0.185 -4.5 0.200 -18.4 0.209 -34.7 0.207 -52.4 0.187 -73.4 0.148 -96.3 0.091 -119.2 0.033 -137.6 0.018 9.9 0.058 0.6 0.091 -11.2 0.117 -24.5 0.138 -37.5 0.150 -49.7 0.157 -60.4 0.161 -69.7 0.162 -77.8 0.163 -85.8 S12 (mag) (ang) 0.022 79.0 0.044 68.8 0.065 59.2 0.092 48.4 0.112 38.8 0.130 29.1 0.150 19.2 0.168 8.0 0.186 -4.3 0.200 -18.5 0.209 -34.4 0.207 -52.8 0.188 -73.6 0.149 -96.7 0.091 -119.3 0.034 -136.8 0.018 9.0 0.058 0.5 0.090 -11.3 0.118 -24.3 0.137 -37.3 0.150 -49.6 0.157 -60.2 0.161 -70.1 0.162 -77.6 0.163 -85.8 S22 (mag) 0.998 1.000 0.991 0.984 0.986 0.980 0.975 0.968 0.959 0.949 0.943 0.932 0.928 0.942 0.947 0.953 0.957 0.965 0.964 0.960 0.954 0.947 0.952 0.963 0.981 0.995 (ang) -10.6 -21.3 -31.2 -42.1 -51.5 -60.6 -70.1 -80.7 -92.1 -105.6 -121.1 -139.6 -160.7 176.8 153.6 132.4 112.9 94.8 79.2 64.6 50.5 37.4 24.9 13.3 1.6 -10.3
MITSUBISHI
(5/6)
July/2007
MITSUBISHI SEMICONDUTOR
MGF4934AM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design, malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of safety in the products when in use by customers. Matters of Importance when Using these Materials 1. These materials are designed as reference materials to ensure that all customers purchase Mitsubishi Electric semiconductors best suited to their specific use applications. Please be aware, however, that the technical information contained in these materials does not comprise consent for the execution or use of intellectual property rights or other rights owned by Mitsubishi Electric Corporation. 2. Mitsubishi Electric does not assume responsibility for damages resulting from the use of product data, graphs, charts, programs, algorithms or other applied circuit examples described in these materials, or for the infringement of the rights of third-party owners resulting from such use. 3. The data, graphs, charts, programs, algorithms and all other information described in these materials were current at the issue of these materials, with Mitsubishi Electric reserving the right to make any necessary updates or changes in the products or specifications in these materials without prior notice. Before purchasing Mitsubishi Electric semiconductor products, therefore, please obtain the latest available information from Mitsubishi Electric directly or an authorized dealer. 4. Every possible effort has been made to ensure that the information described in these materials is fully accurate. However, Mitsubishi Electric assumes no responsibility for damages resulting from inaccuracies occurring within these materials. 5. When using the product data, technical contents indicated on the graphs, charts, programs or algorithms described in these materials, assessments should not be limited to only the technical contents, programs and algorithm units. Rather, it is requested that ample evaluations be made of each individual system as a whole, with the customer assuming full responsibility for decisions on the propriety of application. Mitsubishi Electric does not accept responsibility for the propriety of application. 6. The products described in these materials, with the exception of special mention concerning use and reliability, have been designed and manufactured with the purpose of use in general electronic machinery. Accordingly these products have not been designed and manufactured with the purpose of application in machinery or systems that will be used under conditions that can affect human life, or in machinery or systems used in social infrastructure that demand a particularly high degree of reliability. When considering the use of the products described in these materials in transportation machinery (automobiles, trains, vessels), for objectives related to medical treatment, aerospace, nuclear power control, submarine repeaters or systems or other specialized applications, please consult with Mitsubishi Electric directly or an authorized dealer. 7. When considering use of products for purposes other than the specific applications described in these materials, please inquire at Mitsubishi Electric or an authorized dealer. 8. The prior consent of Mitsubishi Electric in writing is required for any reprinting or reproduction of these materials. 9. Please direct any inquiries regarding further details of these materials, or any other comments or matters of attention, to Mitsubishi Electric or an authorized dealer.
MITSUBISHI
(6/6)

▲Up To Search▲

Price & Availability of MGF4934AM07

	To Download MGF4934AM07 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .